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FDPF18N50 - N-Channel MOSFET

Download the FDPF18N50 datasheet PDF. This datasheet also covers the FDP18N50 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 220 mΩ (Typ. ) @ VGS = 10 V, ID = 9 A.
  • Low Gate Charge (Typ. 45 nC).
  • Low Crss (Typ. 25 pF).
  • 100% Avalanche Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP18N50_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDPF18N50 N-Channel MOSFET ON Semiconductor
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FDPF18N20FT-G N-Channel MOSFET ON Semiconductor
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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDPF18N50T MOSFET
FDPF18N20FT N-Channel UniFETTM FRFET MOSFET
FDPF10N50FT N-Channel MOSFET
FDPF10N50UT N-Channel UniFET Ultra FRFET MOSFET
FDPF10N60NZ N-Channel UniFET II MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ November 2013 Features • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.