FDPF190N15A
Features
- RDS(on) = 14.7 mΩ (Typ.) @ VGS = 10 V, ID = 27.4 A
- Low Gate Charge, QG = 31 n C (Typ.)
- Low Crss (Typ. 56 p F)
- Fast Switching Speed
- Improved dv/dt Capability
- Ro HS pliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Consumer Appliances
- LED TV
- Synchronous Rectification for ATX / Sever / Tele PSU
- Uninterruptible Power Supply
- Micro Solar Inverter
TO-220F
Absolute Maximum Ratings TC = 25o C unless otherwise noted.
Symbol VDSS VGSS
ID IDM EAS dv/dt
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- DC
- AC
- Continuous (TC = 25o C)
- Continuous (TC = 100o C)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25o C)
- Derate Above 25o C
(f > 1 Hz)
(Note 1) (Note 2) (Note 3)
TJ, TSTG...
