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FDPF19N40 - N-Channel MOSFET

Download the FDPF19N40 datasheet PDF. This datasheet also covers the FDP19N40 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) =0.2Ω ( Typ. )@ VGS = 10V, ID = 9.5A.
  • Low Gate Charge ( Typ. 32nC).
  • Low Crss ( Typ. 20pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant UniFETTM tm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP19N40_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDPF190N15A N-Channel MOSFET
FDPF10N50FT N-Channel MOSFET
FDPF10N50UT N-Channel UniFET Ultra FRFET MOSFET
FDPF10N60NZ N-Channel UniFET II MOSFET
FDPF10N60ZUT N-Channel UniFET Ultra FRFET MOSFET
FDPF12N35 350V N-Channel MOSFET
FDPF12N50 N-Channel MOSFET
FDPF12N50FT N-Channel MOSFET
FDPF12N50NZ N-Channel MOSFET
FDPF12N50T N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP19N40 / FDPF19N40 N-Channel MOSFET October FDP19N40 / FDPF19N40 N-Channel MOSFET 400V, 19A, 0.24Ω Features • RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A • Low Gate Charge ( Typ. 32nC) • Low Crss ( Typ. 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.