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FDPF19N40 - N-Channel MOSFET

This page provides the datasheet information for the FDPF19N40, a member of the FDP19N40 N-Channel MOSFET family.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) =0.2Ω ( Typ. )@ VGS = 10V, ID = 9.5A.
  • Low Gate Charge ( Typ. 32nC).
  • Low Crss ( Typ. 20pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant UniFETTM tm.

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Datasheet preview – FDPF19N40

Datasheet Details

Part number FDPF19N40
Manufacturer Fairchild Semiconductor
File Size 589.53 KB
Description N-Channel MOSFET
Datasheet download datasheet FDPF19N40 Datasheet
Additional preview pages of the FDPF19N40 datasheet.

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Full PDF Text Transcription

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FDP19N40 / FDPF19N40 N-Channel MOSFET October FDP19N40 / FDPF19N40 N-Channel MOSFET 400V, 19A, 0.24Ω Features • RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A • Low Gate Charge ( Typ. 32nC) • Low Crss ( Typ. 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.
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