FDPF19N40
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and mutation mode.
Key Features
- RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A
- Low Gate Charge ( Typ. 32nC)
- Low Crss ( Typ. 20pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS compliant UniFETTM tm
