FDPF33N25T Datasheet | Fairchild Semiconductor

FDP33N25 / FDPF33N25T 250V N-Channel MOSFET October UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features - - - - - 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies...