Datasheet Summary
- N-Channel PowerTrench® MOSFET
December 2013
N-Channel PowerTrench® MOSFET
100 V, 20 A, 38.2 mΩ
Features
- RDS(on) = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Consumer Appliances
- LCD/LED/PDP TV
- Synchronous Rectification
- Uninterruptible Power Supply
- Micro Solar...
