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FDPF3860T - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Consumer Appliances LCD/LED/PDP TV Synchronous Recti

Key Features

  • RDS(on) = 29.1 mΩ (Typ. ) @ VGS = 10 V, ID = 5.9 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDPF3860T — N-Channel PowerTrench® MOSFET December 2013 FDPF3860T N-Channel PowerTrench® MOSFET 100 V, 20 A, 38.2 mΩ Features • RDS(on) = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Consumer Appliances • LCD/LED/PDP TV • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D GDS G TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.