Datasheet Summary
- N-Channel PowerTrench® MOSFET
December 2013
N-Channel PowerTrench® MOSFET
150 V, 15 A, 40 mΩ Features
- RDS(on) = 31 mΩ (Typ.) @ VGS = 10 V, ID = 15 A
- Fast Switching Speed
- Low Gate Charge, QG = 14.3 nC (Typ.)
- High Performance Trench Technology for Extremely Low
RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintain-ing superior switching performance.
Applications
- Consumer Appliances
- LED TV
- Synchronous Rectification
- Uninterruptible Power Supply
- Motor...
