FDPF52N20T
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A
- Low gate charge ( Typ. 49nC)
- Low Crss ( Typ. 66pF)
- Fast switching
- 100% avalanche tested
- Improve dv/dt capability
- RoHS compliant tm
