FDPF5N50UT Datasheet | Fairchild Semiconductor

- N-Channel Uni FETTM Ultra FRFETTM MOSFET November 2013 500 V, 4 A, 2 Ω Features N-Channel Uni FETTM Ultra FRFETTM MOSFET Description Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. Uni FET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore Uni FET Ultra FRFET MOSFET can remove additional ponent and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. - RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2 A - Low Gate Charge (Typ. 11 n C) - Low Crss (Typ. 5 p F) - 100% Avalanche Tested - Improved dv/dt Capability - Ro HS pliant Applications - LCD/LED TV - Lighting - Uninterruptible Power Supply - AC-DC Power Supply TO-220F S TC = 25o C unless otherwise noted. FDPF5N50UT 500 ±30 - Continuous (TC = 100o C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25o C (TC = 25o C) - Continuous (TC = 25o C) 4- 2.4- 16- 216 4 8.5 20 28 0.22 -55 to +150 300 Unit V V A A m J A m J V/ns W W/o C o C o...