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FDPF680N10T Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Consumer Appliances • LCD/LED/PDP TV • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D GDS TO-220F G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDPF680N10T 100 ±20 12 7.6 48 50.4 13.0 24 0.19 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.

Overview

FDPF680N10T — N-Channel PowerTrench® MOSFET November 2013 FDPF680N10T N-Channel PowerTrench® MOSFET 100 V, 12 A, 68.

Key Features

  • RDS(on) = 54 mΩ (Typ. ) @ VGS = 10 V, ID = 6 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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