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FDPF680N10T - N-Channel MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Consumer Appliances LCD/LED/PDP TV Synchronous Rectif

Features

  • RDS(on) = 54 mΩ (Typ. ) @ VGS = 10 V, ID = 6 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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FDPF680N10T — N-Channel PowerTrench® MOSFET November 2013 FDPF680N10T N-Channel PowerTrench® MOSFET 100 V, 12 A, 68 mΩ Features • RDS(on) = 54 mΩ (Typ.) @ VGS = 10 V, ID = 6 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Consumer Appliances • LCD/LED/PDP TV • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D GDS TO-220F G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
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