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FDPF7N50F - N-Channel MOSFET

Download the FDPF7N50F datasheet PDF. This datasheet also covers the FDP7N50F variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 0.95Ω ( Typ. )@ VGS = 10V, ID = 3A.
  • Low gate charge ( Typ. 15nC).
  • Low Crss ( Typ. 6.3pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant tm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP7N50F_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP7N50F / FDPF7N50F N-Channel MOSFET November 2007 UniFETTM FDP7N50F / FDPF7N50F N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features • RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A • Low gate charge ( Typ. 15nC) • Low Crss ( Typ. 6.3pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.