Datasheet4U Logo Datasheet4U.com

FDPF8N50NZ - N-Channel MOSFET

This page provides the datasheet information for the FDPF8N50NZ, a member of the FDP8N50NZ N-Channel MOSFET family.

Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Features

  • RDS(on) = 770 m (Typ. ) @ VGS = 10 V, ID = 4 A.
  • Low Gate Charge (Typ. 14 nC).
  • Low Crss (Typ. 5 pF).
  • 100% Avalanche Tested.
  • Improve dv/dt Capability.
  • ESD Improved Capability.
  • RoHS Compliant N-Channel UniFETTM II MOSFET.

📥 Download Datasheet

Datasheet preview – FDPF8N50NZ

Datasheet Details

Part number FDPF8N50NZ
Manufacturer Fairchild Semiconductor
File Size 859.99 KB
Description N-Channel MOSFET
Datasheet download datasheet FDPF8N50NZ Datasheet
Additional preview pages of the FDPF8N50NZ datasheet.
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET October 2013 FDP8N50NZ / FDPF8N50NZ 500 V, 8 A, 850 m Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant N-Channel UniFETTM II MOSFET Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.
Published: |