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FDQ7698S - N-Channel MOSFET

Description

The FDQ7698S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology.

Features

  • Q2: 15 A, 30V. RDS(on) = 7.5 mΩ @ VGS = 10V RDS(on) = 9 mΩ @ VGS = 4.5V.
  • Q1: 12A, 30V. RDS(on) = 12 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.5V 1 2 3 4 8 14 13 Q1 12 11 10 SO-14 Vin G1 G2 S2 S2 S2 5 6 7 Q2 9 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25° C unless otherwise noted Parameter Q2 30 ±16 (Note 1a) Q1 30 ±16 12 50 1.8 1.1.
  • 55 to +150 Units V V A W °C - Continuous -.

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Full PDF Text Transcription

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FDQ7698S August 2003 FDQ7698S Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package   General Description The FDQ7698S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology. Features • Q2: 15 A, 30V. RDS(on) = 7.5 mΩ @ VGS = 10V RDS(on) = 9 mΩ @ VGS = 4.5V • Q1: 12A, 30V. RDS(on) = 12 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.
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