FDS4488
Description
This N -Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required.
Features
- 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.5 V
- Low gate charge (9.5 n C typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- DC/DC converter
- Load switch
- Motor drives
D D SO-8
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
G G S S S S S S
TA=25o C unless otherwise noted
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
Parameter
Ratings
30 ±25
(Note 1a)
Units
7.9 40 2.5 1.2 1.0
- 55 to +175
Power Dissipation for Single...
