Datasheet4U Logo Datasheet4U.com

FDS4488 - N-Channel MOSFET

General Description

This N -Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.5 V.
  • Low gate charge (9.5 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

📥 Download Datasheet

Full PDF Text Transcription for FDS4488 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDS4488. For precise diagrams, and layout, please refer to the original PDF.

FDS4488 December 2001 FDS4488 30V N-Channel PowerTrench® MOSFET General Description This N -Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrenc...

View more extracted text
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required. Features • 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.5 V • Low gate charge (9.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDS4480 N-Channel MOSFET
FDS4410 N-Channel MOSFET
FDS4410A Single N-Channel MOSFET
FDS4435 P-Channel MOSFET
FDS4435A P-Channel MOSFET
FDS4435BZ P-Channel PowerTrench MOSFET
FDS4435BZ_F085 P-Channel PowerTrench MOSFET
FDS4465 P-Channel MOSFET
FDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET
FDS4470 N-Channel MOSFET