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FDS4501H - Complementary PowerTrench Half-Bridge MOSFET

General Description

This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • Q1: N-Channel 9.3A, 30V RDS(on) = 18 mΩ @ V GS = 10V RDS(on) = 23 mΩ @ V GS = 4.5V.
  • Q2: P-Channel.
  • 5.6A,.
  • 20V RDS(on) = 46 mΩ @ V GS =.
  • 4.5V RDS(on) = 63 mΩ @ V GS =.
  • 2.5V.

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FDS4501H May 2001 FDS4501H Complementary PowerTrench® Half-Bridge MOSFET General Description This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 9.3A, 30V RDS(on) = 18 mΩ @ V GS = 10V RDS(on) = 23 mΩ @ V GS = 4.5V • Q2: P-Channel –5.6A, –20V RDS(on) = 46 mΩ @ V GS = –4.5V RDS(on) = 63 mΩ @ V GS = –2.