FDS4501H Description
This plementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDS4501H Key Features
- Q1: N-Channel 9.3A, 30V RDS(on) = 18 mΩ @ V GS = 10V RDS(on) = 23 mΩ @ V GS = 4.5V
- Q2: P-Channel -5.6A, -20V RDS(on) = 46 mΩ @ V GS = -4.5V RDS(on) = 63 mΩ @ V GS = -2.5V