FDS4685 Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V 20V).
FDS4685 Key Features
- 8.2 A, -40 V RDS(ON) = 0.027 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability