FDS4685 Datasheet | Fairchild Semiconductor

Features - - 8.2 A, - 40 V RDS(ON) = 0.027 Ω @ VGS = - 10 V RDS(ON) = 0.035 Ω @ VGS = - 4.5 V - Fast switching speed - High performance trench technology for extremely low RDS(ON) - High power and current handling capability Applications - Power management - Load switch - Battery protection General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V). D D D D SO-8 Pin 1 54 63 72 81 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Ratings - 40 ±20 - 8.2 - 50 2.5 1.4...