FDS4770
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Key Features
- 13.2 A, 40 V. RDS(ON) = 10.5 mΩ @ VGS = 10 V
- Low gate charge (30 nC)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
