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FDS4953 Datasheet PDF

Fairchild Semiconductor FDS4953

Dual 30V P-Channel MOSFET

Part No. FDS4953
Datasheet FDS4953 Download
Manufacturer
Fairchild Semiconductor
Description Dual 30V P-Channel MOSFET
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FDS4953 datasheet page 1 preview

GENERAL DESCRIPTION

These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

FEATURES

-5 A, -30 V. RDS(ON) = 0.053 Ω @ VGS = -10 V, RDS(ON) = 0.095 Ω @ VGS = -4.5V. Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D2 D1 D1 S FD 53 49 S2 G2 5 6 7 8 4 3 2 1 SO-8 pin 1 S1 G1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter TA = 25oC unless otherwise noted Ratings Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipatio...
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