FDS6375
Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V).
Key Features
- 8 A, –20 V. RDS(ON) = 24 mΩ @ VGS = –4.5 V RDS(ON) = 32 mΩ @ VGS = –2.5 V
- Low gate charge (26 nC typical)
- High performance trench technology for extremely low RDS(ON)
- High current and power handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG
