FDS6375 Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 8V). Applications Power management Load switch Battery protection.
FDS6375 Key Features
- 8 A, -20 V. RDS(ON) = 24 mΩ @ VGS = -4.5 V RDS(ON) = 32 mΩ @ VGS = -2.5 V
- Low gate charge (26 nC typical)
- High performance trench technology for extremely low RDS(ON)
- High current and power handling capability