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FDS6609A - P-Channel Logic Level PowerTrench MOSFET

General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • 6.3 A,.
  • 30 V . RDS(ON) = 0.032 Ω @ V GS = -10 V RDS(ON) = 0.05 Ω @ V GS = -4.5 V.
  • Low gate charge.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6609A April 2000 PRELIMINARY FDS6609A P-Channel Logic Level PowerTrench® MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • –6.3 A, –30 V . RDS(ON) = 0.032 Ω @ V GS = -10 V RDS(ON) = 0.05 Ω @ V GS = -4.