FDS6609A Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6609A Key Features
- 6.3 A, -30 V . RDS(ON) = 0.032 Ω @ V GS = -10 V RDS(ON) = 0.05 Ω @ V GS = -4.5 V
- Low gate charge
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability