FDS6614A
Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Key Features
- 9.3 A, 30 V
- RDS(on) = 0.018 W @ VGS = 10 V RDS(on) = 0.025 W @ VGS = 4.5 V
- Low gate charge (12nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(on)
- High power and current handling capability
