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FDS6614A - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

  • • • • • • 9.3 A, 30 V. RDS(on) = 0.018 W @ VGS = 10 V RDS(on) = 0.025 W @ VGS = 4.5 V. Low gate charge (12nC typical). Fast switching speed. High performance trench technology for extremely low RDS(on). High power and current handling capability.

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Datasheet Details

Part number FDS6614A
Manufacturer Fairchild Semiconductor
File Size 275.19 KB
Description N-Channel MOSFET
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FDS6614A January 2000 FDS6614A N-Channel Logic Level PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • • • • • 9.3 A, 30 V. RDS(on) = 0.018 W @ VGS = 10 V RDS(on) = 0.025 W @ VGS = 4.5 V. Low gate charge (12nC typical). Fast switching speed. High performance trench technology for extremely low RDS(on). High power and current handling capability.
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