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FDS6630A - N-Channel MOSFET

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • 6.5 A, 30 V. RDS(on) = 0.038 Ω @ VGS = 10 V RDS(on) = 0.053 Ω @ VGS = 4.5 V.
  • Low gate charge (5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6630A April 1999 FDS6630A N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 6.5 A, 30 V. RDS(on) = 0.038 Ω @ VGS = 10 V RDS(on) = 0.053 Ω @ VGS = 4.5 V • • • • Low gate charge (5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.