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FDS6676AS - 30V N-Channel PowerTrench SyncFET

General Description

The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge.

Key Features

  • 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky body diode Low gate charge (45nC typical) High performance trench technology for extremely low RDS(ON) and fast switching.
  • High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6676AS 30V N-Channel PowerTrench SyncFET November 2005 FDS6676AS 30V N-Channel PowerTrench® SyncFET™ General Description The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge. The FDS6676AS RDS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features • 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.