FDS6961A Description
RDS(ON) = 0.090 Ω @ VGS = 10 V RDS(ON) = 0.140 Ω @ VGS = 4.5 V. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON).
FDS6961A Datasheet
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDS6961A | Dual N-Channel MOSFET |
RDS(ON) = 0.090 Ω @ VGS = 10 V RDS(ON) = 0.140 Ω @ VGS = 4.5 V. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON).