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FDS7066ASN3 - 30V N-Channel PowerTrench SyncFET

General Description

The FDS7066ASN3 is designed to replace a single SO8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Key Features

  • 19 A, 30 V RDS(ON) = 4.8 mΩ @ VGS = 10 V RDS(ON) = 6.0 mΩ @ VGS = 4.5 V.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.
  • Fast switching.
  • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size.

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FDS7066ASN3 August 2004 FDS7066ASN3 30V N-Channel PowerTrench® SyncFET™ General Description The FDS7066ASN3 is designed to replace a single SO8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7066ASN3 includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS7066ASN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode. Features • 19 A, 30 V RDS(ON) = 4.8 mΩ @ VGS = 10 V RDS(ON) = 6.0 mΩ @ VGS = 4.