FDS7788 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features - 18 A, 30 V. RDS(ON) = 4.0 mΩ @ VGS = 10 V RDS(ON) = 5.0 mΩ @ VGS = 4.5 V - Low gate charge - Fast switching speed - High power and current handling capability - High performance trench technology for extremely low RDS(ON) Applications - DC/DC converter - Load switch - Motor drives 5 6 4 3 2 1 SO-8 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25o C unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units 18 50 2.5 1.2 1.0 - 55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ,...