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FDS9945 - 60V N-Channel PowerTrench MOSFET

General Description

These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • 3.5 A, 60 V. RDS(ON) = 0.100Ω @ V GS = 10 V RDS(ON) = 0.200Ω @ V GS = 4.5V.
  • Optimized for use in switching DC/DC converters with PWM controllers.
  • Very fast switching.
  • Low gate charge. D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G1 S1 G G2 S S2 S 8 1 S Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed TA=25oC unless otherwise noted Parameter Rat.

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FDS9945 February 2001 FDS9945 60V N-Channel PowerTrench® MOSFET General Description These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 3.5 A, 60 V. RDS(ON) = 0.100Ω @ V GS = 10 V RDS(ON) = 0.200Ω @ V GS = 4.5V • Optimized for use in switching DC/DC converters with PWM controllers • Very fast switching • Low gate charge.