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FDT1600N10ALZ - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.

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Key Features

  • RDS(on) = 121 mΩ (Typ. ) @ VGS = 10 V, ID = 2.8 A.
  • RDS(on) = 156 mΩ (Typ. ) @ VGS = 5 V, ID = 1.8 A.
  • Low Gate Charge (Typ. 2.9 nC).
  • Low Crss (Typ. 2.04 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features • RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A • Low Gate Charge (Typ. 2.9 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.