FDT1600N10ALZ
Features
- RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A
- RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A
- Low Gate Charge (Typ. 2.9 n C)
- Low Crss (Typ. 2.04 p F)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- Ro HS pliant
Description
This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced Power Trench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.
Application
- Consumer Appliances
- LED TV and Monitor
- Synchronous Rectification
- Uninterruptible Power Supply
- Micro Solar Inverter
SOT-223
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol VDSS VGSS
IDM EAS dv/dt
Drain to Source Voltage Gate to Source Voltage
Drain Current
Drain Current Single Pulse Avalanche Energy Peak...
