FDT1600N10ALZ - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDT1600N10ALZ
Manufacturer	Fairchild Semiconductor
File Size	748.03 KB
Description	MOSFET
Datasheet	FDT1600N10ALZ Datasheet
Additional preview pages of the FDT1600N10ALZ datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Consumer Appliances LED TV and Monitor Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D D SOT-223 S D G GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.Symbol VDSS VGSS ID IDM EAS dv/dt Dra

Features

RDS(on) = 121 mΩ (Typ. ) @ VGS = 10 V, ID = 2.8 A.
RDS(on) = 156 mΩ (Typ. ) @ VGS = 5 V, ID = 1.8 A.
Low Gate Charge (Typ. 2.9 nC).
Low Crss (Typ. 2.04 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability.
RoHS Compliant.

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Published: Jan 11, 2017 |