FDT3N40
Features
- RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A
- Low Gate Charge (Typ. 4.5 n C)
- Low Crss (Typ. 3.7 p F)
- 100% Avalanche Tested
Applications
- LCD/LED TV
- Lighting
- Uninterruptible Power Supply
April 2013
Description
Uni FETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
G SOT-223
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
- Pulsed
Gate-Source...
