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FDT86113LZ - MOSFET

General Description

Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package HBM ESD pro

Key Features

  • General.

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FDT86113LZ N-Channel PowerTrench® MOSFET March 2011 FDT86113LZ N-Channel PowerTrench® MOSFET 100 V, 3.3 A, 100 m: Features General Description „ Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ HBM ESD protection level > 3 KV typical (Note 4) „ 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.