FDT86113LZ Description
at VGS = 10 V, ID = 3.3 A Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package HBM ESD protection level > 3 KV typical (Note 4) 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been...
FDT86113LZ Key Features
- Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- HBM ESD protection level > 3 KV typical (Note 4)
- 100% UIL tested
- DC Switch
- RoHS pliant