FDT86256
Features
- Max r DS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
- Max r DS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
- Very low Qg and Qgd pared to peting trench technologies
August 2011
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
- Fast switching speed
- 100% UIL Tested
- Ro HS pliant
Applications
- DC-DC conversion
- Inverter
- Synchronous Rectifier
SOT-223
D GDS
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25 °C TC = 25 °C TA =...
