FDU8778 Description
Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V Low gate resistance This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching...
FDU8778 Key Features
- Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A
- Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A
- Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V
- Low gate resistance
- RoHS pliant
- DC-DC for Desktop puters and Servers
- VRM for Intermediate Bus Architecture
- Continuous (Die Limited)
- Pulsed
- 55 to 175