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FDU8778 - N-Channel MOSFET

Description

Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V Low gate resistance This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC con

Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD8778/FDU8778 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8778/FDU8778 N-Channel PowerTrench® MOSFET 25V, 35A, 14mΩ Features General Description „ Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V „ Low gate resistance This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
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