FDU8778 Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 14.0mΩ at VGS = 10V, ID = 35A - Max r DS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A - Low gate charge: Qg(TOT) = 12.6n C(Typ), VGS = 10V - Low gate resistance This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. - Ro HS pliant AD FREE I Application - DC-DC for Desktop puters and Servers - VRM for Intermediate Bus Architecture G DS I-PAK (TO-251AA) Short Lead I-PAK MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous (Die Limited) -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics (Note 1) (Note 2) RθJC Thermal Resistance, Junction to Case...