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FDV305N - 20V N-Channel MOSFET

General Description

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process.

It has been optimized for power management applications.

Key Features

  • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V.
  • Low gate charge.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDV305N January 2003 FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • • • Load switch Battery protection Power management D D S SOT-23 G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 ± 12 0.9 2 0.