FDW6923
Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications.
Key Features
- -3.5 A, -20 V. RDS(ON) = 0.045 Ω @ VGS = -4.5 V RDS(ON) = 0.075 Ω @ VGS = -2.5 V
- VF < 0.55 V @ 1 A
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package
