Description
MOSFET
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.It
Features
- Max rS1S2(on) = 126mΩ at VGS =.
- 4.5V, IS1S2 =.
- 1A.
- Max rS1S2(on) = 141mΩ at VGS =.
- 2.5V, IS1S2 =.
- 1A.
- Max rS1S2(on) = 198mΩ at VGS =.
- 1.8V, IS1S2 =.
- 1A.
- Max rS1S2(on) = 303mΩ at VGS =.
- 1.5V, IS1S2 =.
- 1A.
- Occupies only 1.5 mm2 of PCB area, less than 50% of the area of 2 x 2 BGA.
- Ultra-thin package: less than 0.65 mm height when mounted to PCB.
- High power and current hand.