Datasheet Details
| Part number | FDZ663P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 246.21 KB |
| Description | MOSFET |
| Datasheet |
 FDZ663P Datasheet
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| Part number | FDZ663P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 246.21 KB |
| Description | MOSFET |
| Datasheet |
FDZ663P Datasheet
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Max rDS(on) = 134 mΩ at VGS = -4.5 V, ID = -2 A Max rDS(on) = 171 mΩ at VGS = -2.5 V, ID = -1.5 A Max rDS(on) = 216 mΩ at VGS = -1.8 V, ID = -1 A Max rDS(on) = 288 mΩ at VGS = -1.5 V, ID = -1 A Occupies only 0.64 mm2 of PCB area.
Less than 16% of the area of 2 x 2 BGA Ultra-thin package: less than 0.4 mm height when mounted to PCB RoHS Compliant Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ663P minimizes both PCB space and rDS(on).
This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile (0.4 mm) and small (0.8x0.8 mm2) packaging, low gate charge, and low r
FDZ663P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET FDZ663P December 2011 P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -2.
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