FFPF08S60SN Datasheet | Fairchild Semiconductor

Features - High Speed Switching, trr < 25ns @ IF = 8A - High Reverse Voltage and High Reliability - Ro HS pliant STEALTHTM II Rectifier tm 8A, 600V STEALTHTM II Rectifier The FFPF08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications - General Purpose - Switching Mode Power Supply - Boost Diode in continuous mode power factor corrections - Power switching circuits TO-220F-2L 1. Cathode 2. Anode 1. Cathode 2. Anode Absolute Maximum Ratings TC = 25o C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating and Storage Temperature Range @ TC = 60o C Ratings 600 600 600 8 60 -65 to +150 Units V V V A A o Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Ratings 6.8 Units o C/W Package Marking and Ordering Information Device Marking F08S60SN Device FFPF08S60SNTU Package TO220F-2L Reel Size - Tape Width - Quantity ©2008 Fairchild Semiconductor Corporation FFPF08S60SN Rev. A .fairchildsemi. Free Datasheet http://..net/ Electrical Characteristics TC = 25o C unless otherwise noted Symbol VFM1 IRM1 trr trr Irr S factor Qrr trr Irr S factor Qrr WAVL IF = 8A IF = 8A VR = 600V VR = 600V IF = 1A, di/dt = 100A/μs, VR = 30V IF = 8A, di/dt = 200A/μs, VR = 390V Parameter TC = 25o C TC = 125o C TC = 25o C TC = 125o C TC = 25o C TC = 25 C o Min. 10 Typ. 2.7 2.1 13 15 2.5 0.4 19 32 3.8 0.7...