FFPF10H60S Datasheet | Fairchild Semiconductor

Features - High Speed Switching ( trr=25ns(Typ.) @ IF=10A ) - High Reverse Voltage and High Reliability - Avalanche Energy Rated - Low Forward Voltage( VF=2.1V(Typ.) @ IF=10A ) tm General Description The FFPF10H60S is hyperfast rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping rectifiers in a variety of switching power supplies and other power swithching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications - General Purpose - Switching Mode Power Supply - Free-wheeling diode for motor application - Power switching circuits Pin Assignments TO-220F-2L 1 2 Marking:F10H60S 1 1. Cathode 2 2. Anode 1. Cathode 2. Anode Absolute Maximum Ratings Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG TC = 25°C unless otherwise noted Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 600 600 600 @ TC = 85 °C 10 100 - 65 to +150 Units V V V A A °C Thermal Characteristics T Symbol RθJC = 25°C unless otherwise noted Parameter Maximum Thermal Resistance, Junction to Case Max 3.4 Units °C/W Package Marking and Ordering Information Device...