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FFPF15S60S - Diode

General Description

The FFPF15S60S is STEALTHTM II rectifier with soft recovery characteristics.

It is silicon nitride passivated ion-implanted epitaxial planar construction.

This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications.

Key Features

  • Stealth Recovery Trr = 35ns (@ IF = 15 A).
  • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C).
  • 600V Reverse Voltage and High Reliability.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FFPF15S60S — STEALTH™ II Diode November 2014 FFPF15S60S 15 A, 600 V, STEALTHTM II Diode Features • Stealth Recovery Trr = 35ns (@ IF = 15 A) • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) • 600V Reverse Voltage and High Reliability • Improved dv/dt Capability • RoHS Compliant Applications • General Purpose • Switching Mode Power Supply • Boost Diode in Continuous Mode Power Factor Corrections • Power Switching Circuits Description The FFPF15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications.