FFSP3065A - Silicon Carbide Schottky Diode

Datasheet Summary

Description

SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost.

Features

Max Junction Temperature 175 oC.
Avalanche Rated 180 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery / No Forward Recovery.

Fairchild Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	FFSP3065A
Manufacturer	Fairchild Semiconductor
File Size	304.01 KB
Description	Silicon Carbide Schottky Diode
Datasheet	FFSP3065A Datasheet
Additional preview pages of the FFSP3065A datasheet.

📁 Similar Datasheet

FFSP05120A - Silicon Carbide Schottky Diode (ON Semiconductor)
FFSP0665A - Silicon Carbide Schottky Diode (ON Semiconductor)
FFSP08120A - Silicon Carbide Schottky Diode (ON Semiconductor)
FFSP0865A - Silicon Carbide Schottky Diode (ON Semiconductor)
FFSP10120A - Silicon Carbide Schottky Diode (ON Semiconductor)
FFSP1265A - SiC Schottky Diode (ON Semiconductor)
FFSP15120A - Silicon Carbide Schottky Diode (ON Semiconductor)
FFSP20120A - Silicon Carbide Schottky Diode (ON Semiconductor)
FFSP2065A - Silicon Carbide Schottky Diode (ON Semiconductor)
FFSP2065B - Silicon Carbide Schottky Diode (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text

FFSP3065A — Silicon Carbide Schottky Diode FFSP3065A Silicon Carbide Schottky Diode 650 V, 30 A Features • Max Junction Temperature 175 oC • Avalanche Rated 180 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits July 2016 Description SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost.

Published: May 28, 2019 |