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FFSP3065A - Silicon Carbide Schottky Diode

General Description

SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost.

Key Features

  • Max Junction Temperature 175 oC.
  • Avalanche Rated 180 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.

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FFSP3065A — Silicon Carbide Schottky Diode FFSP3065A Silicon Carbide Schottky Diode 650 V, 30 A Features • Max Junction Temperature 175 oC • Avalanche Rated 180 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits July 2016 Description SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost.