FFSP3065A Datasheet | Fairchild Semiconductor

Features - Max Junction Temperature 175 o C - Avalanche Rated 180 m J - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery / No Forward Recovery Applications - General Purpose - SMPS, Solar Inverter, UPS - Power Switching Circuits July 2016 Description Si C Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions Absolute Maximum Ratings TC = 25 o C unless otherwise noted. Symbol Parameter VRRM EAS IF IF, Max IF,SM IF,RM Ptot TJ, TSTG Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (Note 1) Continuous Rectified...