FGA25N120ANTD_F109 Datasheet | Fairchild Semiconductor

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT April 2013 FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features - NPT Trench Technology, Positive Temperature Coefficient - Low Saturation Voltage: VCE(sat), typ = 2.0 V  @ IC = 25 A and TC = 25C - Low Switching Loss: Eoff, typ = 0.96 mJ  @ IC = 25 A and TC = 25C - Extremely Enhanced Avalanche Capability Applications - Induction Heating, Microwave Oven Description Using Fairchild®'s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the...