Fairchild Semiconductor FGA30N60LSD
The FGA30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ.| Part No. | FGA30N60LSD |
|---|---|
| Datasheet | FGA30N60LSD Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | MOSFETs and bipolar transistors |
| Buy | Stock & Price |
FEATURES
● Low saturation voltage: VCE(sat) =1.1V @ IC = 30A● High Input Impedance
● Low Conduction Loss tm
GENERAL DESCRIPTION
APPLICATIONS
● Solar Inverters● UPS, Welder C G E
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VGES IC Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current ICM (1) Non-repetitive Peak Surge Current IFSM 60Hz Single Half-Sine Wave PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperatureDESCRIPTION
Collector-Emitter Voltage @ TC = 25°C @ TC = 100°C FGA30N60LSD 600 ± 20 60 30 90 150 @ TC = 25°C @ TC = 100°C 480 192 -55 to +150 -55 to +150 300 Units V V A A A A W W °C °C °C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. ---- Max. 0.26 0.92 40 Units °C/W °C/W °C/W ©2008 Fairchild Semiconductor Corporation 1 FGA30N60LSD Rev. A FGA30N60LSD Package Marking and Ordering Information Device Marking FGA30N60LSD Device FGA30N60LSDTU...
