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FGA40T65UQDF Datasheet IGBT

Manufacturer: Fairchild (now onsemi)

Overview: FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT FGA40T65UQDF 650 V, 40 A Field Stop Trench IGBT May.

General Description

Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating and MWO.

Applications • Induction Heating, MWO C G C E TO-3PN Absolute Maximum Ratings Symbol VCES VGES IC ILM (1) ICM (2) IF IFM PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC @ TC = 25oC Pulsed Collector Current Diode Forward Current Diode Forward Current @ TC = 25oC @ TC = 100oC Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 100oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

Key Features

  • Maximum Junction Temperature: TJ = 175oC.
  • Positive Temperature Co-efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.33 V ( Typ. ) @ IC = 40 A.
  • 100% of the Parts tested for ILM(1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • RoHS Compliant General.

More Datasheets from Fairchild (now onsemi)

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FGA40N65SMD 40A Field Stop IGBT
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FGA120N30D 300V PDP IGBT
FGA15N120AN NPT Igbt
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FGA15N120ANTD 1200V NPT Trench IGBT

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