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FGA5065ADF - Field Stop Trench IGBT

General Description

This ADF IGBT series adopted field stop trench 3rd generation IGBT which offer extreme low VCE(sat) and much faster switching characteristics for outstanding efficiency.

Key Features

  • Maximum Junction Temperature : TJ = 175oC.
  • Positive Temperaure Co-efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.7 V(Typ. ) @ IC = 50 A.
  • 100% of the Parts Tested for ILM(1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • RoHS Compliant General.

📥 Download Datasheet

Other Datasheets by Fairchild (now onsemi)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT FGA5065ADF 650 V, 50 A Field Stop Trench IGBT August 2015 Features • Maximum Junction Temperature : TJ = 175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 50 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • RoHS Compliant General Description This ADF IGBT series adopted field stop trench 3rd generation IGBT which offer extreme low VCE(sat) and much faster switching characteristics for outstanding efficiency.