Download FGA5065ADF Datasheet PDF
Fairchild Semiconductor
FGA5065ADF
Features - Maximum Junction Temperature : TJ = 175o C - Positive Temperaure Co-efficient for Easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 50 A - 100% of the Parts Tested for ILM(1) - High Input Impedance - Fast Switching - Tighten Parameter Distribution - Ro HS pliant General Description This ADF IGBT series adopted field stop trench 3rd generation IGBT which offer extreme low VCE(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology; Single Boost, Multi Channel Interleaved etc with over 20KHz switching performance. TO3P package provide super low thermal resistance for much wider SOA for system stability. Applications - PFC topology for home applicnce: Single Boost, Multi Channel Interleaved etc. TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES...