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FGA6065ADF - IGBT

General Description

This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Rds(on) and much faster switching characteristics for outstanding efficiency.

Key Features

  • Maximum Junction Temperature : TJ = 175 oC.
  • Positive Temperaure Co-efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ. ) @ IC = 60 A.
  • 100% of the Parts Tested for ILM (1).
  • High Input Impedance.
  • Fast Switching.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGA6065ADF — 650 V, 60 A Field Stop Trench IGBT FGA6065ADF 650 V, 60 A Field Stop Trench IGBT May 2015 Features • Maximum Junction Temperature : TJ = 175 oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A • 100% of the Parts Tested for ILM (1) • High Input Impedance • Fast Switching • RoHS Compliant General Description This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Rds(on) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance.