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FGA70N30T - 70A PDP IGBT

Description

Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

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Features

  • High current capability.
  • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A.
  • High input impedance.
  • Fast switching.
  • RoHS complaint tm General.

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Datasheet Details

Part number FGA70N30T
Manufacturer Fairchild Semiconductor
File Size 589.82 KB
Description 70A PDP IGBT
Datasheet download datasheet FGA70N30T Datasheet
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FGA70N30T 300V, 70A PDP Trench IGBT December 2007 FGA70N30T 300V, 70A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A • High input impedance • Fast switching • RoHS complaint tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Application . PDP System C G TO-3P G C E E Absolute Maximum Ratings Symbol VCES VGES Gate-Emitter Voltage @ TC = 25oC @ TC = 25oC @ TC = 100 C o Description Collector-Emitter Voltage Ratings 300 ±30 160 201 90.6 -55 to +150 -55 to +150 300 Units V V A W W oC o o Pulsed Collector Current IC pulse(1)* www.DataSheet4U.
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