FGB20N6S2D
Overview
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive.
- 100kHz Operation at 390V, 7A
- 200kHZ Operation at 390V, 5A
- 600V Switching SOA Capability
- Low Conduction Loss
- Low Eon
- Soft Recovery Diode IGBT (co-pack) formerly Developmental Type TA49332 (Diode formerly Developmental Type TA49469) Package TO-247 E C G Symbol C TO-220AB E C G TO-263AB G G E E Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25°C Collector Current Continuous, TC = 110°C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C, Figure 2 Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V Power Dissipation Total TC
