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FGH25N120FTDS Datasheet PDF

Fairchild Semiconductor FGH25N120FTDS

IGBT

Part No. FGH25N120FTDS
Datasheet FGH25N120FTDS Download
Manufacturer
Fairchild Semiconductor
Description IGBT
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FGH25N120FTDS datasheet page 1 preview

FEATURES

● High Speed Switching
● Low Saturation Voltage: VCE(sat) = 1.60 V @ IC = 25 A
● High Input Impedance
● RoHS Compliant

APPLICATIONS

● Solar Inverter, UPS, Welder, PFC

GENERAL DESCRIPTION

Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. C G CE TO-247

ABSOLUTE MAXIMUM RATINGS

Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL

DESCRIPTION

Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC Diode Continuous Forward Current Diode Continuous Forward Current @ TC = 25oC @ TC = 100oC Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC =
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