FGP30N6S2D Datasheet | Fairchild Semiconductor

Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs bining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: - - - - - - Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits Features - 100k Hz Operation at 390V, 14A - 200k HZ Operation at 390V, 9A - 600V Switching SOA Capability - Typical Fall Time- - . 90ns at TJ = 125o C - Low Gate Charge - . . . . 23n C at VGE = 15V - Low Plateau Voltage - - . . .6.5V Typical - UIS Rated - - - - - 150m J - Low Conduction Loss IGBT formerly Developmental Type TA49336 Diode formerly Developmental Type TA49390 Package JEDEC STYLE TO-247 Symbol JEDEC STYLE TO-220AB JEDEC STYLE TO-263AB Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25°C Collector Current Continuous, TC = 110°C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C, Figure 2 Pulsed Avalanche Energy, ICE = 12A, L = 2m H, VDD = 50V Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Operating Junction Temperature Range Storage Junction Temperature Range Ratings 600 45 20 108 ±20 ±30 60A at 600V 150 167 1.33 -55 to 150 -55 to 150 m J W W/°C...