FGP7N60RUFD Datasheet | Fairchild Semiconductor

Features - High speed switching - Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A - High input impedance - CO-PAK, IGBT with FRD : trr = 50 ns (typ.) - Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V Applications Motor controls and general purpose inverters. Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature . TO-220 2.Collector 3.Emitter 1.Gate Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C 600 ± 20 14 7 21 12 60 69 28 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 1.8 3.0 62.5 Units °C/W °C/W °C/W ©2005 Fairchild Semiconductor Corporation FGP7N60RUFD Rev. A .fairchildsemi....