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FGP7N60RUFD - RUF IGBT CO-PAK

Description

Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature.

Features

  • High speed switching.
  • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A.
  • High input impedance.
  • CO-PAK, IGBT with FRD : trr = 50 ns (typ. ).
  • Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V.

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Full PDF Text Transcription

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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK 0 October 2006 FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Features • High speed switching • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A • High input impedance • CO-PAK, IGBT with FRD : trr = 50 ns (typ.) • Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V Applications Motor controls and general purpose inverters. Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. C G 1 TO-220 2.Collector 3.Emitter 1.Gate E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max.
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