FGP7N60RUFD Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required.
FGP7N60RUFD Key Features
- High speed switching
- Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A
- High input impedance
- CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
- Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V