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FGPF4533 - PDP IGBT

General Description

Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

PDP System GC E TO-220F (Retractable) Absolute Maximum Ratings Symbol VCES VGES IC pulse(1

Key Features

  • High current capability.
  • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A.
  • High input impedance.
  • Fast switching.
  • RoHS compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGPF4533 330V, PDP Trench IGBT August 2010 FGPF4533 330V, PDP IGBT Features • High current capability • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A • High input impedance • Fast switching • RoHS compliant General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications • PDP System GC E TO-220F (Retractable) Absolute Maximum Ratings Symbol VCES VGES IC pulse(1)* PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.